PART |
Description |
Maker |
RCR150BX12 RCR150BX16 RCR150BX20 RCR150BX24 FR500A |
THYRISTOR|REVERSE-CONDUCTING|600V V(DRM)|STF-M20 THYRISTOR|REVERSE-CONDUCTING|800V V(DRM)|STF-M20 THYRISTOR|REVERSE-CONDUCTING|1KV V(DRM)|STF-M20 THYRISTOR|REVERSE-CONDUCTING|1.2KV V(DRM)|STF-M20 THYRISTOR|REVERSE-CONDUCTING|600V V(DRM)|TO-200VAR84 晶闸管|反向导电| 600V的五(DRM)的|00VAR84 THYRISTOR|REVERSE-CONDUCTING|600V V(DRM)|TO-200VAR50 THYRISTOR|REVERSE-CONDUCTING|600V V(DRM)|TO-200AB THYRISTOR|REVERSE-CONDUCTING|800V V(DRM)|TO-200VAR50
|
Rochester Electronics, LLC
|
H15R1203 |
Reverse conducting IGBT
|
Infineon Technologies
|
IHW40N120R3 |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies A...
|
IHW15N120R3 |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
IHW20N120R |
Reverse Conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
IHW20N120R3 |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
IHW30N120R2 |
Reverse Conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
IKW40N65WR5-15 |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies A...
|
IKW40N65WR5-16 |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies A...
|
5SHX08F4510 |
Reverse Conducting Integrated Gate-Commutated Thyristor 390 A, 4500 V, SCR
|
ABB, Ltd. The ABB Group
|
IXRH50N80 IXRH50N60 |
IGBT with Reverse Blocking capability
|
IXYS[IXYS Corporation]
|